1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN4452CW60

IGN4452CW60

RF Transistor by Integra Technologies, Inc.
239 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN4452CW60 Image

The IGN4452CW60 from Integra Technologies, Inc. is a RF Transistor with Frequency 4.4 to 5.2 GHz, Power 47.78 dBm, Power(W) 60 W, Gain 8 to 15 dB, Efficiency 46%. Tags: Flanged, Ceramic. More details for IGN4452CW60 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN4452CW60
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    C-Band, GaN/SiC HEMT RF Power Transistor from 4.4 to 5.2 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application
    C Band View all
  • CW/Pulse
    CW View all
  • Frequency
    4.4 to 5.2 GHz
  • Power
    47.78 dBm
  • Power(W)
    60 W
  • Gain
    8 to 15 dB
  • Efficiency
    46%
  • Input Return Loss
    6 to 25 dB
  • VSWR
    2.00:1, 3.00:1
  • Supply Voltage
    32 V
  • Voltage - Drain-Source (Vdss)
    130 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    40 to 55 %
  • Drain Current
    5 A
  • Thermal Resistance
    0.9 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • Note
    DC Gate Current: 5 mA, Gate Pinch-Off Voltage: -5V

Technical Documents
View details on the manufacturer's website
View similar products