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QPD0020

RF Transistor by Qorvo (96 more products)

Note : Your request will be directed to Qorvo.

The QPD0020 from Qorvo is a GaN RF Power Transistor that operates from DC to 6 GHz. It provides a saturated output power of up to 34.7 Watts with a P3dB gain of 18.8 dB and has a drain efficiency of up to 77.8 %. The device requires a supply voltage of 48 V. This GaN-on-SiC HEMT transistor can support both CW and pulsed mode of operations.

The device is housed in an industry-standard surface-mount QFN package that measures 4x3 mm and is ideal for radar, W-CDMA/LTE, macrocell base station driver, small cell final stage, active antenna, land mobile, and military radio communication applications.

Product Specifications

    Product Details

    • Part Number :
      QPD0020
    • Manufacturer :
      Qorvo
    • Description :
      GaN-on-SiC HEMT Transistor from DC to 6 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Cellular
    • Application :
      Microcell Base Station, W-CDMA / LTE, Active Antenna, Small Cell
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 6 GHz
    • Power :
      45.4 dBm(Psat)
    • Power(W) :
      34.7 W(Psat)
    • Pulsed Width :
      100 us
    • Duty_Cycle :
      10%
    • Gain :
      17.7 to 18.8 dB (at 3dB Compression)
    • Supply Voltage :
      48 V
    • Drain Efficiency :
      77.8%
    • Quiescent Drain Current :
      30 mA
    • Package Type :
      Surface Mount
    • Package :
      20 Pin QFN Package
    • Dimension :
      4 x 3 mm
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 85 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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