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PD85035-E

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PD85035-E Image

The PD85035-E from STMicroelectronics is a RF Transistor with Frequency 870 MHz, Power 46.02 dBm, Power(W) 35 to 40 W, Power Gain (Gp) 15 to 17 dB, Efficiency 60 to 72%. Tags: Surface Mount. More details for PD85035-E can be seen below.

Product Specifications

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Product Details

  • Part Number
    PD85035-E
  • Manufacturer
    STMicroelectronics
  • Description
    40 W, LDMOS / MOSFET RF Transistor operating at 870 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Broadcast, Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial, Radio
  • CW/Pulse
    CW
  • Frequency
    870 MHz
  • Power
    46.02 dBm
  • Power(W)
    35 to 40 W
  • Power Gain (Gp)
    15 to 17 dB
  • Efficiency
    60 to 72%
  • VSWR
    20.00:1
  • Supply Voltage
    13.6 V
  • Voltage - Drain-Source (Vdss)
    40 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 15 V
  • Current
    350 mA
  • Drain Current
    8 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    95 W
  • Feedback Capacitance
    1.4 pF
  • Input Capacitance
    76 pF
  • Junction Temperature (Tj)
    165 Degree C
  • Output Capacitance
    45 pF
  • Thermal Resistance
    1 Degree C/W
  • Package Type
    Surface Mount
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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