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CG2H40035

RF Transistor by Wolfspeed, A Cree Company | Visit website (103 more products)

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The CG2H40035 from Wolfspeed is a GaN High Electron Mobility Transistor (HEMT) that operates from DC to 6 GHz. It provides a saturated output power of 40 W with a small signal gain of 14.3 dB, an efficiency of 64% and requires a 28 V supply. This transistor is available in both a screw-down, flange package and solder-down, pill package and is suitable for applications such as 2-Way Private Radio, Broadband Amplifiers, Cellular Infrastructure, Test Instrumentation, and Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms.

Product Specifications

    Product Details

    • Part Number :
      CG2H40035
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      40 W GaN HEMT Transistor from DC to 6 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Broadcast, Test & Measurement, Cellular, Wireless Infrastructure
    • Application :
      Radio, Test Instrumentation, OFDM, W-CDMA, EDGE, CDMA
    • CW/Pulse :
      CW
    • Frequency :
      DC to 6 GHz
    • Saturated Power :
      40 W
    • Small Signal Gain :
      14 to 14.3 dB
    • VSWR :
      1.10:1
    • Class :
      Class A, Class AB
    • Supply Voltage :
      28 V (Operating)
    • Threshold Voltage :
      -3.8 to -2.3 V (Gate)
    • Breakdown Voltage - Drain-Source :
      84 V
    • Current :
      500 mA
    • Drain Efficiency :
      64%
    • Drain Current :
      7.8 to 10.8 A (Saturated)
    • Feedback Capacitance :
      0.7 pF
    • Input Capacitance :
      15.4 pF
    • Junction Temperature (Tj) :
      225 Degree C
    • Output Capacitance :
      3 pF
    • Thermal Resistance :
      3.4 °C/W
    • Operating Temperature :
      -40 to 85 Degree C
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Output Waveform : OFDM, W-CDMA, EDGE, CDMA, Gate Quiescent Voltage : -2.7 V

    Technical Documents

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