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The FHX35X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 17 dBm, Power(W) 0 to 0.05 W, Gain 8.5 to 10 dB, Noise Figure 1.2 to 1.6 dB. Tags: Surface Mount. More details for FHX35X can be seen below.
410 W GaN-on-SiC HEMT from 3600 to 3800 MHz
400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
56 W GaN-on-SiC HEMT from 3700 to 3980 MHz
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