FHX35X

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The FHX35X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 17 dBm, Power(W) 0 to 0.05 W, Gain 8.5 to 10 dB, Noise Figure 1.2 to 1.6 dB. Tags: Surface Mount. More details for FHX35X can be seen below.

Product Specifications

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Product Details

  • Part Number
    FHX35X
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    12 GHz, 8.5 to 10 dB Gain GaAs HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaAs
  • Application Industry
    SATCOM
  • Frequency
    12 GHz
  • Power
    17 dBm
  • Power(W)
    0 to 0.05 W
  • Gain
    8.5 to 10 dB
  • Noise Figure
    1.2 to 1.6 dB
  • Supply Voltage
    2 V
  • Input Power
    -10 to 8 dBm
  • Drain Current
    15 to 85 mA
  • Thermal Resistance
    155 to 200 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Gate Source Breakdown Voltage : -0.3 V

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