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FHX14LG

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FHX14LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Gain 11 to 13 dB, Noise Figure 0.55 to 0.6 dB, Supply Voltage 2 V, Drain Current 10 to 60 mA. Tags: Surface Mount. More details for FHX14LG can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FHX14LG
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      12 GHz, 11 to 13 dB Gain GaAs HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaAs
    • Application Industry :
      SATCOM
    • Frequency :
      12 GHz
    • Gain :
      11 to 13 dB
    • Noise Figure :
      0.55 to 0.6 dB
    • Supply Voltage :
      2 V
    • Drain Current :
      10 to 60 mA
    • Thermal Resistance :
      300 to 400 Degree C/W
    • Package Type :
      Surface Mount
    • Package :
      LG
    • Dimension :
      4.78 × 4.78 × 1.3
    • RoHS :
      Yes
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Gate Source Breakdown Voltage : -0.3 V

    Technical Documents

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