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FSX027WF

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The FSX027WF from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 23.5 to 24.5 dBm, Power(W) 0.22 to 0.28 W, Power Gain (Gp) 6.5 to 14 dB, Noise Figure 2.5 dB. Tags: Ceramic. More details for FSX027WF can be seen below.

Product Specifications

    Product Details

    • Part Number :
      FSX027WF
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      8 GHz, Gain GaAs FET

    General Parameters

    • Transistor Type :
      FET
    • Technology :
      GaAs
    • Application :
      General Purpose
    • Frequency :
      8 GHz
    • Power :
      23.5 to 24.5 dBm
    • Power(W) :
      0.22 to 0.28 W
    • Power Gain (Gp) :
      6.5 to 14 dB
    • Noise Figure :
      2.5 dB
    • Transconductance :
      100 ms
    • Voltage - Gate-Source (Vgs) :
      -5 V
    • Power Dissipation (Pdiss) :
      1.5 W
    • Thermal Resistance :
      70 to 100 Degree C/W
    • Package Type :
      Ceramic
    • Storage Temperature :
      -65 to 175 Degree C
    • Note :
      Saturated Drain Current : 70 to 150 mA, Gate Source Breakdown Voltage : -5 V

    Technical Documents

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