SG26F30S-D Image

SG26F30S-D

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SG26F30S-D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency DC to 2.7 GHz, Power 43 dBm, Power(W) 19.95 W, Saturated Power 45 to 46 dBm, Power Gain (Gp) 17.5 to 18.5 dB. Tags: Surface Mount. More details for SG26F30S-D can be seen below.

Product Specifications

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Product Details

  • Part Number
    SG26F30S-D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    DC to 2.7 GHz, Gain GaN on SiC HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure
  • Application
    WCDMA, LTE, Base Station
  • Frequency
    DC to 2.7 GHz
  • Power
    43 dBm
  • Power(W)
    19.95 W
  • Saturated Power
    45 to 46 dBm
  • Power Gain (Gp)
    17.5 to 18.5 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    11.5 to 13.5%
  • Power Dissipation (Pdiss)
    23.8 W
  • Thermal Resistance
    5.5 to 6.5 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Gain Flatness : 1.6 dB, Forward Gate Current : 76 mA, Reverse Gate Current : -1.3 mA

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