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AG28S12F

RF Transistor by AGNIT Semiconductors
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The AG28S12F from AGNIT Semiconductors is a RF Transistor with Frequency DC to 2.4 GHz, Power 40.79 dBm, Power(W) 12 W, Saturated Power 12 W, Power Gain (Gp) 9 dB. Tags: Flanged. More details for AG28S12F can be seen below.

Product Specifications

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Product Details

  • Part Number
    AG28S12F
  • Manufacturer
    AGNIT Semiconductors
  • Description
    12 W RF GaN Transistor from DC to 2.4 GHz

General Parameters

  • Technology
    GaN View all
  • Application
    S Band, VHF, UHF, L Band, C Band, X Band
  • CW/Pulse
    CW View all
  • Frequency
    DC to 2.4 GHz
  • Power
    40.79 dBm
  • Power(W)
    12 W
  • Saturated Power
    12 W
  • Power Gain (Gp)
    9 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Efficiency
    55%
  • Package Type
    Flanged View all
View details on the manufacturer's website
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