ART800PEG

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

ART800PEG Image

The ART800PEG from Ampleon is a Power LDMOS Transistor that operates from 1 to 650 MHz. It delivers an output P1dB of 800 W with a power gain of 29.2 dB and a drain efficiency of 74.5%. This transistor is based on Advanced Rugged Technology (ART) and has integrated dual-sided ESD protection that enables class C operation and complete switch off of the transistor. It requires a drain-source voltage of 65 V. 

This transistor is available in a flanged package measuring 20.75 x 13.20 x 3.92 mm and is ideal for a wide range of ISM, broadcast, and communications applications.

Product Specifications

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Product Details

  • Part Number
    ART800PEG
  • Manufacturer
    Ampleon
  • Description
    800 W Power LDMOS Transistor from 1 to 650 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Application Industry
    Radar, Broadcast, Wireless Infrastructure
  • Application
    Radar, Scientific and Medical, Industrial, Plasma Generators, MRI Systems
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 650 MHz
  • Power
    59.03 dBm
  • Power(W)
    800 W
  • Power Gain (Gp)
    26.8 to 29.3 dB
  • Input Return Loss
    17 dB
  • Supply Voltage
    30 to 65 V
  • Breakdown Voltage - Drain-Source
    203 to 208 V
  • Voltage - Drain-Source (Vdss)
    200 V
  • Voltage - Gate-Source (Vgs)
    -9 to 13 V
  • Drain Efficiency
    70 to 74.5 %
  • Drain Leakage Current (Id)
    1.4 uA
  • Gate Leakage Current (Ig)
    140 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Flanged View all
  • RoHS
    Yes
  • Operating Temperature
    -65 to 150 Degree C

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