B10G3640N16DL

RF Transistor by Ampleon

Note : Your request will be directed to Ampleon.

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The B10G3640N16DL from Ampleon is a 3-Stage Doherty MMIC Transistor that operates from 3600 to 4000 MHz. It is designed for multi-carrier, multi-standard GSM, W-CDMA, LTE, and 5G NR small-cell base stations. This transistor is based on Ampleon’s state-of-the-art LDMOS technology. It integrates a carrier and peaking device, an input splitter, an output combiner, and an output-matching circuit into a single package. This Doherty transistor delivers 16 W of output power, with a power gain of 36 dB and a drain efficiency of 22%. It requires a 28 V DC supply and is available in an LGA package measuring 7 x 7 mm.

Product Specifications

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Product Details

  • Part Number
    B10G3640N16DL
  • Manufacturer
    Ampleon
  • Description
    3-Stage Doherty MMIC Transistor from 3.6 to 4 GHz for Base-Station Applications

General Parameters

  • Transistor Type
    LDMOS View all
  • Application Industry
    Wireless Infrastructure View all
  • Application
    4G / LTE, Base Station, GSM, WCDMA, Small Cell
  • CW/Pulse
  • Frequency
    3.6 to 4 GHz
  • Power
    42.04 dBm
  • Power(W)
    16 W (At 3 dB gain compression)
  • Power Gain (Gp)
    36 dB
  • Supply Voltage
    28 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Drain Efficiency
    22 %
  • Package Type
    Surface Mount View all
  • RoHS
    Yes
  • Note
    Average output power:0.63 W ; ACPR:-34 dBc