BLC10G27XS-400AVT

RF Transistor by Ampleon (292 more products)

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The BLC10G27XS-400AVT from Ampleon is an LDMOS Doherty Power Transistor that operates from 2496 to 2690 MHz. It delivers a peak output power of 430 W with a power gain of 13.3 dB and has a drain efficiency of 45%. This rugged transistor requires a DC supply voltage of 28 V. It has low thermal resistance which provides excellent thermal stability and has low memory effects for digital pre-distortion. The transistor is available in an internally matched package with integrated ESD protection and is suitable for multi-carrier and base station applications.

Product Specifications

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Product Details

  • Part Number
    BLC10G27XS-400AVT
  • Manufacturer
    Ampleon
  • Description
    430 W LDMOS Doherty Power Transistor from 2496 to 2690 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station
  • CW/Pulse
    CW, Pulse
  • Frequency
    2496 to 2690 MHz
  • Peak Output Power
    368 to 430 W
  • Pulsed Width
    100 us
  • Power Gain (Gp)
    14.7 dB
  • Transconductance
    15 to 29 S
  • Input Return Loss
    7 to 11 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    65 V
  • Voltage - Gate-Source (Vgs)
    6 to 9 V
  • Current
    750 mA
  • Drain Efficiency
    41 to 57 %
  • Drain Leakage Current (Id)
    2.8 uA
  • Gate Leakage Current (Ig)
    280 nA
  • Junction Temperature (Tj)
    225 Degree C
  • Package
    Air Cavity Plastic Earless Flanged Package 6 Leads
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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