The A2T26H160-24S from NXP Semiconductors is a RF Transistor with Frequency 2496 to 2690 MHz, Power Gain (Gp) 21.5 dB, Power 44.47 dBm, Supply Voltage 28 V, Effeciency 46.5%. More details for A2T26H160-24S can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
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