The A2T26H160-24S from NXP Semiconductors is a RF Transistor with Frequency 2.49 to 2.69 GHz, Power 44.47 dBm, Power(W) 27.99 W, Duty_Cycle 0.1, Power Gain (Gp) 14.5 to 17.5 dB. More details for A2T26H160-24S can be seen below.

Product Specifications

  • Part Number
    A2T26H160-24S
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTOR, 2496 - 2690 MHz, 28 W AVG, 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.49 to 2.69 GHz
  • Power
    44.47 dBm
  • Power(W)
    27.99 W
  • CW Power
    138 to 178 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    14.5 to 17.5 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.481
  • Drain Current
    350 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.56 °C/W
  • Package Type
    Flange
  • Package
    NI--780S--4L2L
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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