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CLS3H2731L-700

RF Transistor by Ampleon
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CLS3H2731L-700 Image

The CLS3H2731L-700 from Ampleon is a GaN-SiC HEMT Power Transistor that operates from 2.7 GHz to 3.1 GHz. It delivers an output power of more than 700 W with a power gain of 13 dB and a drain efficiency of 54%. This transistor has a long pulse capability of 300 μs with a 10 % duty cycle and an input return loss of 8 dB. It requires a DC supply of 50 V and is available in an SOT502A flanged ceramic package. This pulse transistor is ideal for S-band power amplifiers for ERP and CHIRP radar systems.

Product Specifications

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Product Details

  • Part Number
    CLS3H2731L-700
  • Manufacturer
    Ampleon
  • Description
    700 W GaN-on-SiC HEMT Power Transistor from 2.7 to 3.1 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Radar View all
  • CW/Pulse
    Pulse View all
  • Frequency
    2.7 to 3.1 GHz
  • Power
    58.45 dBm
  • Power(W)
    700 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    10 %
  • Power Gain (Gp)
    13 dB
  • Input Return Loss
    8 dB
  • Supply Voltage
    50 V
  • Drain Efficiency
    54 %
  • Package Type
    Flanged View all
  • RoHS
    Yes
View details on the manufacturer's website
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