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CGHV40180

RF Transistor by Wolfspeed, A Cree Company (75 more products)

Note : Your request will be directed to Wolfspeed, A Cree Company.

The CGHV40180 from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 2 GHz. It provides an output power of 250 W and a gain of 24 dB while operating from a 28 V or 50 V supply. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

This transistor has been created for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater power density and output power than competing Si LDMOS devices, enabling radar applications to benefit from greater range within the same design footprint.

Product Specifications

    Product Details

    • Part Number :
      CGHV40180
    • Manufacturer :
      Wolfspeed, A Cree Company
    • Description :
      250 W GaN HEMT Transistor from DC to 2 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence, Radar
    • Application :
      Medical, Military
    • CW/Pulse :
      CW
    • Frequency :
      DC to 1 GHz
    • Power :
      54.1 to 54.8 dBm
    • Power(W) :
      257 to 302 Watts
    • Saturated Power :
      53.7 to 54.3 dBm
    • Small Signal Gain :
      23.4 to 24 dB
    • Power Gain (Gp) :
      19.3 to 20.3 dB
    • Effeciency :
      67 to 75 %
    • Supply Voltage :
      50 V
    • Threshold Voltage :
      -3.8 to -2.3 V
    • Breakdown Voltage - Drain-Source :
      150 V
    • Current :
      31.4 to 37.6 A
    • Drain Efficiency :
      64 to 74 %
    • Feedback Capacitance :
      1.23 pF
    • Input Capacitance :
      57.8 pF
    • Output Capacitance :
      13.7 pF
    • Package Type :
      Flanged, Pill
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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