CGHV40180

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CGHV40180 Image

The CGHV40180 from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 2 GHz. It provides an output power of 250 W and a gain of 24 dB while operating from a 28 V or 50 V supply. This device is available in a 2-lead metal/ceramic flange and pill package for optimal electrical and thermal performance.

This transistor has been created for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices. The new UHF GaN RF device delivers greater power density and output power than competing Si LDMOS devices, enabling radar applications to benefit from greater range within the same design footprint.

Product Specifications

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Product Details

  • Part Number
    CGHV40180
  • Manufacturer
    Wolfspeed
  • Description
    250 W GaN HEMT Transistor from DC to 2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Radar
  • Application
    Medical, Military
  • CW/Pulse
    CW
  • Frequency
    DC to 1 GHz
  • Power
    54.1 to 54.8 dBm
  • Power(W)
    257 to 302 Watts
  • Saturated Power
    53.7 to 54.3 dBm
  • Small Signal Gain
    23.4 to 24 dB
  • Power Gain (Gp)
    19.3 to 20.3 dB
  • Efficiency
    67 to 75 %
  • Supply Voltage
    50 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Current
    31.4 to 37.6 A
  • Drain Efficiency
    64 to 74 %
  • Feedback Capacitance
    1.23 pF
  • Input Capacitance
    57.8 pF
  • Output Capacitance
    13.7 pF
  • Package Type
    Flanged, Pill
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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