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GRF0020D

RF Transistor by Guerrilla RF
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The GRF0020D from Guerrilla RF is a GaN-on-SiC HEMT Power Amplifier that operates from DC to 7 GHz. It delivers a saturated output power of 30 W and a gain of up to 24.3 dB with an efficiency of up to 69.1%. This amplifier requires a DC supply of 50 V or 28 V and consumes 30 mA of current. It is available in a bare die package that measures 1.265 x 0.755 mm and is ideal for cellular infrastructure, radar, communications, and test instrumentation applications supporting CW, linear, and pulse operations.

Product Specifications

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Product Details

  • Part Number
    GRF0020D
  • Manufacturer
    Guerrilla RF
  • Description
    30 W GaN-on-SiC HEMT Amplifier from DC to 7 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Wireless Infrastructure, SATCOM, Cellular
  • Application
    5G, Medical, Plasma Generators, Repeater
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 7 GHz
  • Saturated Power
    30 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10 %
  • Gain
    11 to 21.9 dB
  • Small Signal Gain
    15 dB
  • Power Gain (Gp)
    17 dB
  • Efficiency
    53.6 to 67.6 %
  • Supply Voltage
    28 V & 50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Current
    30 mA
  • Drain Leakage Current (Id)
    50 uA
  • Quiescent Drain Current
    15 mA
  • Package Type
    Die View all
  • Package
    QFN-16
  • Dimension
    1.265 x 0.755 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 105 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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