IB1012S1100

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1012S1100 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 60.41 to 61.91 dBm, Power(W) 1552.39 W, Duty_Cycle 0.01, Gain 9.8 dB. Tags: Flange. More details for IB1012S1100 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB1012S1100
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1025 to 1150 MHz, 9.8 dB Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.025 to 1.150 GHz
    • Power :
      60.41 to 61.91 dBm
    • Power(W) :
      1552.39 W
    • Peak Output Power :
      1100 W
    • Pulsed Width :
      10 us
    • Duty_Cycle :
      0.01
    • Gain :
      9.8 dB
    • Power Gain (Gp) :
      9.62 to 11.12 dB
    • Supply Voltage :
      60 V
    • Breakdown Voltage :
      85 V (Collector Emmiter)
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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