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The IB1012S1100 from Integra Technologies, Inc. is a RF Transistor with Frequency 1025 to 1150 MHz, Gain 9.8 dB, Power 60.64 dBm, Input Power 1160 W, Supply Voltage 60 V. More details for IB1012S1100 can be seen below.
450 Watt, 50 Volt, 3.1 to 3.5 GHz, GaN RF IMFET
15 Watt, 50 Volt, DC to 4 GHz, GaN RF Transistor
15W, 300 MHz to 1.215 GHz, GaN RF Input-Matched Transistor
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