IB1012S1100 Image

IB1012S1100

Note : Your request will be directed to Integra Technologies, Inc..

The IB1012S1100 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 60.41 to 61.91 dBm, Power(W) 1552.39 W, Duty_Cycle 0.01, Gain 9.8 dB. Tags: Flange. More details for IB1012S1100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1012S1100
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1025 to 1150 MHz, 9.8 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    60.41 to 61.91 dBm
  • Power(W)
    1552.39 W
  • Peak Output Power
    1100 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    9.8 dB
  • Power Gain (Gp)
    9.62 to 11.12 dB
  • Supply Voltage
    60 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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