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IGN0450M850

RF Transistor by Integra Technologies, Inc.

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The IGN0450M850 from Integra Technologies is a P-band Power Transistor that operates from 400 to 450 MHz. It delivers an output power of more than 850 W (Pulsed) with a gain of over 20 dB and an efficiency of up to 75 %. The transistor has a pulse width of 300 μs and a duty cycle of 10 %. It is fabricated using GaN on SiC HEMT technology and can handle an input power up to 15 W. The transistor requires a DC supply of 50 V and consumes 150 mA of current. It is available in a metal-based package with an epoxy-sealed ceramic lid and is ideal for P-band radar systems.

Product Specifications

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Product Details

  • Part Number
    IGN0450M850
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    850 W GaN-on-SiC Power Transistor from 400 to 450 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    400 to 450 MHz
  • Power
    59.29 to 60.61 dBm
  • Power(W)
    850 to 1150 W
  • Duty_Cycle
    10 %
  • Gain
    19.8 to 21.8 dB
  • VSWR
    2:1 to 3:1
  • Supply Voltage
    50 V
  • Input Power
    15 W
  • Voltage - Drain-Source (Vdss)
    180 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    70 to 85 %
  • Drain Current
    50 A
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • Package Type
    Flange
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Grade
    Commercial, Military, Space Qualified
  • Storage Temperature
    -55 to 150 Degree C

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