Note : Your request will be directed to Integra Technologies, Inc..
The IGN0450M850 from Integra Technologies is a P-band Power Transistor that operates from 400 to 450 MHz. It delivers an output power of more than 850 W (Pulsed) with a gain of over 20 dB and an efficiency of up to 75 %. The transistor has a pulse width of 300 μs and a duty cycle of 10 %. It is fabricated using GaN on SiC HEMT technology and can handle an input power up to 15 W. The transistor requires a DC supply of 50 V and consumes 150 mA of current. It is available in a metal-based package with an epoxy-sealed ceramic lid and is ideal for P-band radar systems.
280 W GaN HEMT from 1.03 to 1.09 GHz
35 W LDMOS Power Transistor from 1 to 650 MHz
25 W Unmatched GaN Transistor from DC to 5 GHz
520 W Thermally-Enhanced LDMOS Transistor from 925 to 960 MHz
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