1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN132

IGN132

RF Transistor by Integra Technologies, Inc.
268 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

The IGN132 from Integra Technologies, Inc. is a RF Transistor with Frequency 0.03 to 0.512 GHz, Power 57.4 dBm, Power(W) 550 W, Duty_Cycle 10%, Gain 17 dB. Tags: Flanged, Ceramic. More details for IGN132 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN132
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    VHF/UHF-Band, GaN/SiC HEMT RF Power Transistor from 0.03 to 0.512 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application
    VHF, UHF
  • CW/Pulse
    Pulse, CW
  • Frequency
    0.03 to 0.512 GHz
  • Power
    57.4 dBm
  • Power(W)
    550 W
  • Peak Output Power
    550 W
  • Pulsed Width
    1 mS
  • Duty_Cycle
    10%
  • Gain
    17 dB
  • Efficiency
    65%
  • VSWR
    2.00:1, 5.00:1
  • Supply Voltage
    50 V
  • Input Power
    37 W
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1 V
  • Drain Efficiency
    56%
  • Drain Current
    39 A
  • Thermal Resistance
    0.45 to 1.4 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • RoHS
    Yes
  • Operating Temperature
    -55 to 225 Degree C
  • Storage Temperature
    -62 to 150 Degree C
  • Note
    DC Gate Current: 3.9 mA, Pulse droop: -0.3 dB, Gate Pinch-Off Voltage: -5V

Technical Documents
View details on the manufacturer's website
View similar products