IGN1012S40 Image

IGN1012S40

Note : Your request will be directed to Integra Technologies, Inc..

The IGN1012S40 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 46.02 dBm, Power(W) 39.99 W, Duty_Cycle 0.02, Gain 22 dB. Tags: Flange. More details for IGN1012S40 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN1012S40
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1.025 to 1.150 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    46.02 dBm
  • Power(W)
    39.99 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Gain
    22 dB
  • Power Gain (Gp)
    21.2 to 23 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.5 V
  • Input Power
    0.3 W
  • Quiescent Drain Current
    18 to 22 mA
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.