A2V09H400-04N

A2V09H400-04N Image

The A2V09H400-04N from NXP Semiconductors is a RF Transistor with Frequency 960 to 720 MHz, Power 50.29 dBm, Power(W) 106.91 W, Duty_Cycle 0.1, Power Gain (Gp) 17.1 to 20 dB. Tags: Flange. More details for A2V09H400-04N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2V09H400-04N
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 720-960 MHz, 107 W Avg., 48 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    960 to 720 MHz
  • Power
    50.29 dBm
  • Power(W)
    106.91 W
  • CW Power
    200 to 437 W
  • Pulsed Power
    200 to 437 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    17.1 to 20 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    48 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.558
  • Drain Current
    688 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.5 °C/W
  • Package Type
    Flange
  • Package
    OM--780--4L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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