The AFT23H200-4S2L from NXP Semiconductors is a RF Transistor with Frequency 2.3 to 2.4 GHz, Power 46.53 dBm, Power(W) 44.98 W, Duty_Cycle 0.1, Power Gain (Gp) 14.6 to 17.6 dB. Tags: Flange. More details for AFT23H200-4S2L can be seen below.

Product Specifications

    Product Details

    • Part Number :
      AFT23H200-4S2L
    • Manufacturer :
      NXP Semiconductors
    • Description :
      Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V

    General Parameters

    • Transistor Type :
      LDMOS
    • Technology :
      Si
    • Application Industry :
      Wireless Infrastructure
    • Application :
      Cellular, Base Station, WCDMA
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      2.3 to 2.4 GHz
    • Power :
      46.53 dBm
    • Power(W) :
      44.98 W
    • CW Power :
      200 to 330 W
    • Pulsed Width :
      10 us
    • Duty_Cycle :
      0.1
    • Power Gain (Gp) :
      14.6 to 17.6 dB
    • VSWR :
      10.00:1
    • Polarity :
      N-Channel
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      0.8 to 1.6 Vdc
    • Voltage - Gate-Source (Vgs) :
      -6 to 10 Vdc
    • Drain Efficiency :
      0.428
    • Drain Current :
      500 mA
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.32 °C/W
    • Package Type :
      Flange
    • Package :
      NI-1230-4LS2L
    • RoHS :
      Yes
    • Operating Temperature :
      -40 to 150 Degree C
    • Storage Temperature :
      -65 to 150 Degree C

    Technical Documents

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