The MHT1003N is a 2450 MHz high power RF transistor from Freescale that has been developed for RF heating products. It has a 250 watt output with 58% power added efficiency and a gain of 15 dB. The transistor requires a 32 V supply and is available in a flanged plastic package.

Product Specifications

  • Part Number
    MHT1003N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 250 W, 32 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy
  • Application
    ISM Band, Commercial
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.45 GHz
  • Power
    53.98 dBm
  • Power(W)
    250.03 W
  • CW Power
    250 W
  • P1dB
    54.2 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    15.9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    32 V
  • Threshold Voltage
    0.9 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.59
  • Drain Current
    25 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.26 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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