The MMRF5014H from NXP Semiconductors is a RF Transistor with Frequency 1 MHz to 2.7 GHz, Power 50.97 dBm, Power(W) 125.03 W, P1dB 51 dBm, Duty_Cycle 0.2. More details for MMRF5014H can be seen below.

Product Specifications

  • Part Number
    MMRF5014H
  • Manufacturer
    NXP Semiconductors
  • Description
    WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 292196 MHz, 125 W CW, 50 V
  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    Cellular, Base Station, WiMAX
  • CW/Pulse
    Pulse, CW
  • Frequency
    1 MHz to 2.7 GHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • CW Power
    4 W
  • P1dB
    51 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    17 to 20 dB
  • Input Return Loss
    -12 to -9 dB
  • VSWR
    20.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.2 to 2.7 Vdc
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Gate-Source (Vgs)
    -8 Vdc
  • Drain Efficiency
    0.642
  • Drain Current
    350 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.86 °C/W
  • Package Type
    Flange
  • Package
    NI--360H--2SB
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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