MRF1K50GN Image

MRF1K50GN

The MRF1K50GN from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 500 MHz, Power 61.53 dBm, Power(W) 1422.33 W, Duty_Cycle 0.2, Power Gain (Gp) 21.5 to 25 dB. Tags: Flange. More details for MRF1K50GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF1K50GN
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, ISM
  • Application
    Scientific, VHF, Broadcast, Medical, Radio, Mobile, ISM, VHF, UHF, Base Stations, Communication
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 500 MHz
  • Power
    61.53 dBm
  • Power(W)
    1422.33 W
  • CW Power
    47 to 56 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    21.5 to 25 dB
  • Input Return Loss
    -16 to -9 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    0.6 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.728
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flange
  • Package
    OM--1230G--4L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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