This 1500W RF LDMOS power transistor from NXP operates from DC to 500 MHz. It delivers 1.50 kW CW at 50V and can survive a VSWR of 65:1. The level of ruggedness increases its reliability, which makes this transistor an excellent alternative to vacuum tubes. It can reduce the number of transistors used in high-power RF amplifiers, which decreases the amplifier size and bill of materials. The transistor has an efficiency of 80 percent at 100 MHz, gain of 23.5 dB, and minimum breakdown voltage of 135V. It is availablein a standard air cavity ceramic package and its impedance is compatible with existing high-power transistors, which makes it easier to use this transistor with existing systems without any changes in PCB design. Even greater reliability can be achieved with the over-molded plastic version of this transistor. It has applications inlaser and plasma sources to particle accelerators, industrial welding machines, radio and VHF TV broadcast transmitters, and amateur radio linear amplifiers. This transistor will be a part of NXP's Product Longevity Program i.e., availability for at least 15 years.

Product Specifications

  • Part Number
    MRF1K50H
  • Manufacturer
    NXP Semiconductors
  • Description
    Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, ISM
  • Application
    Scientific, VHF, Broadcast, Medical, Radio, Mobile, ISM, VHF, UHF, Base Stations, Communication
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 500 MHz
  • Power
    61.46 to 61.9 dBm
  • Power(W)
    1548.82 W
  • CW Power
    1400 to 1550 W
  • Peak Output Power
    1500 W
  • Pulsed Power
    1500 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    22.5 to 25.5 dB
  • Input Return Loss
    -18.3 to -3 dB
  • VSWR
    65.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.7 to 2.7 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.74
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.12 °C/W
  • Package Type
    Flange
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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