The MRF6V2010N from NXP Semiconductors is a RF Transistor with Frequency 10 to 450 MHz, Power 40 dBm, Power(W) 10 W, Power Gain (Gp) 22.5 to 25.5 dB, Input Return Loss -14 to -3 dB. More details for MRF6V2010N can be seen below.

Product Specifications

  • Part Number
    MRF6V2010N
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast
  • Application
    Scientific, Medical
  • CW/Pulse
    CW
  • Frequency
    10 to 450 MHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • CW Power
    10 W
  • Power Gain (Gp)
    22.5 to 25.5 dB
  • Input Return Loss
    -14 to -3 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.7 to 2.7 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 10 Vdc
  • Drain Efficiency
    0.62
  • Drain Current
    30 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3 °C/W
  • Package Type
    Flange
  • Package
    TO--270--2 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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