The MRF7S24250N is a solid-state LDMOS RF power transistor that is designed for industrial, scientific, medical (ISM) and industrial heating applications at 2450 MHz. It can be used for CW, pulse and linear applications. This high gain, high efficiency rugged device is targeted to replace industrial magnetrons and will provide longer life and easier servicing. It can provide up to 250 Watts of CW power. The possibility to shift frequencies and phases opens the door to new use cases where RF energy can be directed only where needed. In addition, the transistor offers advantages inherent to solid-state equipment such as the potential to operate for hundreds of thousands of hours with no performance degradation over time, while delivering a consistent power level that virtually eliminates the need to interrupt the target system for periodic maintenance. The transistor requires a 32 Volt supply and is available in a plastic package which has been designed to provide 30 percent lower thermal resistance than industry-standard air-cavity ceramic transistor packages. As a result of this, the transistor can operate at a lower junction temperature, while reducing heat dissipation requirements to help lower the overall system cost.

Product Specifications

  • Part Number
  • Manufacturer
    NXP Semiconductors
  • Description
    2.4 to 2.5 GHz, RF Power LDMOS Transistor
  • Transistor Type
  • Polarity
  • Application
    ISM Band, RF Energy, Medical
  • Grade
    SATCOM, Military, Commercial
  • Frequency
    2400 to 2500 MHz
  • Gain
    14.3 to 14.7 dB
  • Power
    54.07 dBm (250 Watts)
  • Supply Voltage
    32 V
  • Drain Efficiency
  • Thermal Resistance
  • Package
    Flanged, Plastic
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