The MRF8S7170N from NXP Semiconductors is a RF Transistor with Frequency 728 to 768 MHz, Gain 19.5 dB at 19.5 MHz, Power 182 W, P1dB 182 W, Supply Voltage 28 V. More details for MRF8S7170N can be seen below.

Product Specifications

  • Part Number
    MRF8S7170N
  • Manufacturer
    NXP Semiconductors
  • Description
    728-768 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • Transistor Type
  • Polarity
    N-Channel
  • Application Industry
    Cellular, Wireless Infrastructure
  • Application Type
    Base Stations
  • Class
    Class AB
  • Features
    High Power
  • Frequency
    728 to 768 MHz
  • Gain
    19.5 dB at 19.5 MHz
  • Power
    182 W
  • P1dB
    182 W
  • Supply Voltage
    28 V
  • Technology
    LDMOS
  • Thermal Resistance
    0.37 °CW
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