The MRF8S7170N from NXP Semiconductors is a RF Transistor with Frequency 618 to 803 MHz, Power 46.99 dBm, Power(W) 50 W, P1dB 52.6 dBm, Duty_Cycle 0.1. More details for MRF8S7170N can be seen below.

Product Specifications

  • Part Number
    MRF8S7170N
  • Manufacturer
    NXP Semiconductors
  • Description
    Single W-CDMA Lateral N-Channel RF Power MOSFET, 728-768 MHz, 50 W Avg., 28 V
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    618 to 803 MHz
  • Power
    46.99 dBm
  • Power(W)
    50 W
  • CW Power
    50 W
  • P1dB
    52.6 dBm
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 21 dB
  • Input Return Loss
    -24 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 3 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.37
  • Drain Current
    1200 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.37 °C/W
  • Package Type
    Flange
  • Package
    OM--780--2L PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
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