Note : Your request will be directed to Polyfet RF Devices.
The SH702 from Polyfet RF Devices is a RF Transistor with Power 49 dBm, Power(W) 90 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for SH702 can be seen below.
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
60 W GaN HEMT Operates up to 7 GHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
6 W RF Power GaN HEMT in a Plastic Package
800 W RF LDMOS Transistor from 730 to 960 MHz
460 W GaN Power Amplifier from 1805 to 1880 MHz
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