Note : Your request will be directed to Polyfet RF Devices.
The SP701 from Polyfet RF Devices is a RF Transistor with Power 43 dBm, Power(W) 25 W, Power Gain (Gp) 10 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for SP701 can be seen below.
5 W GaN Power Transistor from DC to 6 GHz
200 W GaN Power Transistor from 2.7 to 2.9 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
615 W Thermally Enhanced LDMOS FET from 730 to 960 MHz
400 W Thermally-Enhanced LDMOS Transistor from 859 to 960 MHz
6 W RF Power GaN HEMT in a Plastic Package
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