MRF175GV Image

MRF175GV

RF Transistor by MACOM (189 more products)

Note : Your Quotation Request will be directed to MACOM.

The MRF175GV from MACOM is a RF Transistor with Frequency 5 to 500 MHz, Power 53.01 dBm, Power(W) 199.99 W, Gain 14 dB, Power Gain (Gp) 14 dB. More details for MRF175GV can be seen below.

Product Specifications

  • Part Number
    MRF175GV
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor
  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM, Broadcast
  • Application
    Avionics, Communication, Commercial, Military, Medical
  • CW/Pulse
    CW
  • Frequency
    5 to 500 MHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • Gain
    14 dB
  • Power Gain (Gp)
    14 dB
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 6 Vdc
  • Drain Gate Voltage
    65 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flange
  • Package
    Flange Ceramic
Click to view more product details on manufacturer's website  »
Need Help?

Need Help?

x
Let us know what you need, we can help find products that meet your requirement.