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SX501

RF Transistor by Polyfet RF Devices

Note : Your request will be directed to Polyfet RF Devices.

The SX501 from Polyfet RF Devices is a RF Transistor with Power 55 dBm, Power(W) 350 W, Power Gain (Gp) 16 dB, VSWR 20.0:1, Breakdown Voltage - Drain-Source 65 V. Tags: Flange. More details for SX501 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SX501
  • Manufacturer
    Polyfet RF Devices
  • Description
    350 W, Si VDMOS Power Transistor

General Parameters

  • Transistor Type
    VDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    Radio, Cellular, Base Stations, MRI
  • Power
    55 dBm
  • Power(W)
    350 W
  • Power Gain (Gp)
    16 dB
  • Transconductance
    9 MOhms
  • VSWR
    20.0:1
  • Drain Gate Voltage
    70 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    28 V
  • Voltage - Gate-Source (Vgs)
    30 V
  • Drain Efficiency
    0.55
  • Drain Current
    28 A
  • Drain Bias Current
    7 mA
  • Quiescent Drain Current
    1.2 A
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    475 W
  • Feedback Capacitance
    15 pF
  • Input Capacitance
    250 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    230 pF
  • Thermal Resistance
    0.34 Degree C/W
  • Package Type
    Flange
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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