TGF2977-SM

RF Transistor by Qorvo (92 more products)

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The TGF2977-SM from Qorvo is a GaN on SiC HEMT transistor that operates from DC to 12 GHz. It provides up to 6 W of power with a linear gain of 13 dB and efficiency of 50%. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in military radar and civilian radar applications.

Product Specifications

    Product Details

    • Part Number :
      TGF2977-SM
    • Manufacturer :
      Qorvo
    • Description :
      5 Watt GaN HEMT from DC to 12 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Aerospace & Defence
    • Application :
      Military, Commercial, Avionics
    • CW/Pulse :
      Pulse, CW
    • Frequency :
      DC to 12 GHz
    • Power :
      37.78 dBm
    • Power(W) :
      6 W
    • Saturated Power :
      37.8 dBm
    • Pulsed Width :
      500 us
    • Duty_Cycle :
      0.1
    • Gain :
      13 dB
    • Supply Voltage :
      32 V
    • Voltage - Gate-Source (Vgs) :
      -2.7 V
    • Quiescent Drain Current :
      25 mA
    • Package Type :
      Surface Mount
    • Package :
      3 x 3 mm
    • RoHS :
      Yes

    Technical Documents

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