The TGF2977-SM from Qorvo is a GaN on SiC HEMT transistor that operates from DC to 12 GHz. It provides up to 6 W of power with a linear gain of 13 dB and efficiency of 50%. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current. It is housed in an industry-standard 3 x 3 mm surface mount QFN package. It can be used in military radar and civilian radar applications.