SGK5254-120A-R Image

SGK5254-120A-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGK5254-120A-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.2 to 5.4 GHz, Power 551.5 dBm, Power(W) 100 to 141.25 W, Gain 15 to 16.5 dB, Power Added Effeciency 0.47. Tags: Flanged. More details for SGK5254-120A-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGK5254-120A-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      5.2 to 5.4 GHz, 15 to 16.5 dB Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      C Band
    • CW/Pulse :
      Pulse
    • Frequency :
      5.2 to 5.4 GHz
    • Power :
      551.5 dBm
    • Power(W) :
      100 to 141.25 W
    • Pulsed Width :
      100 usec
    • Gain :
      15 to 16.5 dB
    • Power Added Effeciency :
      0.47
    • Transconductance :
      12 S
    • Supply Voltage :
      24 V
    • Voltage - Drain-Source (Vdss) :
      24 V
    • Voltage - Gate-Source (Vgs) :
      -10 V
    • Drain Current :
      11.6 to 16.2 A
    • Impedance Zs :
      50 Ohms
    • Thermal Resistance :
      0.65 to 0.85 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Saturated Drain Current : 26 A, Gain Flatness : 1 dB, Forward Gate Current : 24.4 mA, Reverse Gate Current : -12.8 mA

    Technical Documents

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