SGN21-120H-R Image

SGN21-120H-R

RF Transistor by Sumitomo Electric Device Innovations (269 more products)

Note : Your request will be directed to Sumitomo Electric Device Innovations.

The SGN21-120H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 1.7 to 2.5 GHz, Power 51 to 51.9 dBm, Power(W) 125.89 to 154.88 W, Duty_Cycle 10 to 25%, Power Gain (Gp) 14.5 to 15.4 dB. Tags: Flanged. More details for SGN21-120H-R can be seen below.

Product Specifications

    Product Details

    • Part Number :
      SGN21-120H-R
    • Manufacturer :
      Sumitomo Electric Device Innovations
    • Description :
      1.7 to 2.5 GHz, Gain GaN on SiC HEMT

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Radar
    • Application Type :
      S Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.7 to 2.5 GHz
    • Power :
      51 to 51.9 dBm
    • Power(W) :
      125.89 to 154.88 W
    • Pulsed Width :
      1500 to 5000 usec
    • Duty_Cycle :
      10 to 25%
    • Power Gain (Gp) :
      14.5 to 15.4 dB
    • VSWR :
      10.00:1
    • Supply Voltage :
      50 V
    • Voltage - Drain-Source (Vdss) :
      50 V
    • Voltage - Gate-Source (Vgs) :
      -15 V
    • Thermal Resistance :
      1.1 to 1.3 Degree C/W
    • Package Type :
      Flanged
    • RoHS :
      Yes
    • Storage Temperature :
      -55 to 125 Degree C
    • Note :
      Gain Flatness : 0.5 to 1 dB, Forward Gate Current : 177 mA, Reverse Gate Current : -4.3 mA

    Technical Documents

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