WP281P43060MH(S)

RF Transistor by WAVEPIA (79 more products)

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The WP281P43060MH(S) from WAVEPIA is a RF Transistor with Frequency 1.38 to 1.48 GHz, Saturated Power 60 W, Duty_Cycle 10%, Gain 18.5 dB, Small Signal Gain 18.5 dB. Tags: Flanged. More details for WP281P43060MH(S) can be seen below.

Product Specifications

    Product Details

    • Part Number :
      WP281P43060MH(S)
    • Manufacturer :
      WAVEPIA
    • Description :
      60 W, GaN HEMT Transistor from 1.38 to 1.48 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Cellular, Test & Measurement, Radar
    • CW/Pulse :
      Pulse
    • Frequency :
      1.38 to 1.48 GHz
    • Saturated Power :
      60 W
    • Pulsed Width :
      0.1 mS
    • Duty_Cycle :
      10%
    • Gain :
      18.5 dB
    • Small Signal Gain :
      18.5 dB
    • Power Added Effeciency :
      68%
    • Supply Voltage :
      28 V
    • Threshold Voltage :
      -3.1 V (Gate)
    • Breakdown Voltage :
      160 V
    • Voltage - Drain-Source (Vdss) :
      160 V
    • Voltage - Gate-Source (Vgs) :
      -10 to 2 V
    • Drain Efficiency :
      68%
    • Drain Current :
      1000 mA (Saturated)
    • Quiescent Drain Current :
      130 mA
    • Package Type :
      Flanged
    • Package :
      680B
    • Storage Temperature :
      -65 to 150 Degree C
    • Note :
      Gate Quiescent Voltage : '-2.45 V,Pulse Drain Efficiency : 36%

    Technical Documents

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