BLF8G20LS-160V Image

BLF8G20LS-160V

RF Transistor by Ampleon (238 more products)

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The BLF8G20LS-160V from Ampleon is a RF Transistor with Frequency 1.8 to 2 GHz, P1dB 52.04 dBm, Duty_Cycle 0.1, Power Gain (Gp) 19 to 20 dB, Input Return Loss -10 to -7 dB. More details for BLF8G20LS-160V can be seen below.

Product Specifications

  • Part Number
    BLF8G20LS-160V
  • Manufacturer
    Ampleon
  • Description
    52.04 dBm (160 W), LDMOS Transistor from 1800 to 2000 MHz
  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Base Station, WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 2 GHz
  • P1dB
    52.04 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    19 to 20 dB
  • Input Return Loss
    -10 to -7 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.3 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    800 mA
  • Package Type
    Surface Mount
  • Package
    SOT1239B
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
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