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BLP27M810

RF Transistor by Ampleon
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The BLP27M810 from Ampleon is a LDMOS Power Transistor that operates from 3 MHz to 2700 MHz. It provides a P1dB of 10 Watts, gain of more than 16 dB with an efficiency of 19%. The transistor is available in a surface mount thermally enhanced plastic package and is ideal for broadcast, RF Energy and Industrial, Scientific and Medical (ISM) applications. It features excellent ruggedness, high efficiency, good thermal stability and is internally matched for ease of use. The device also has integrated ESD protection and is RoHS compliant.

Product Specifications

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Product Details

  • Part Number
    BLP27M810
  • Manufacturer
    Ampleon
  • Description
    10 W LDMOS Power Transistor from 3 MHz to 2700 MHz

General Parameters

  • Transistor Type
    LDMOS View all
  • Technology
    Si View all
  • Application Industry
    ISM, RF Energy, Wireless Infrastructure
  • Application
    Industrial, ISM Band
  • CW/Pulse
    CW View all
  • Frequency
    10 MHz to 2.7 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • P1dB
    40 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    16 to 17 dB
  • VSWR
    10.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.5 to 2.3 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 13 V
  • Drain Current
    100 mA
  • Package Type
    Surface Mount View all
  • Package
    SOT1371-1
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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