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GTH2e-2425300P Image

The GTH2e-2425300P from Gallium Semiconductor is a GaN-on-SiC Amplifier that operates from 2.4 to 2.5 GHz. It delivers a CW output power of 300 W with a gain of 17 dB and has an efficiency of up to 76%. This amplifier has been designed to simplify the integration into various systems, enhancing the development process of RF engineers. This HEMT requires a DC supply of 50 V and is powered by a supply rail. It is available in an air cavity plastic package with super-ceramic matrix composite (CMC) and offers excellent reliability and thermal performance. This amplifier is ideal for semiconductor plasma sources, microwave plasma chemical vapor deposition (CVD) equipment for synthetic diamond production, and other ISM band applications.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Gallium Semiconductor
  • Description
    300 W High-Efficiency GaN Amplifier from 2.4 to 2.5 GHz

General Parameters

  • Transistor Type
  • Technology
    GaN on SiC
  • Application Industry
  • CW/Pulse
  • Frequency
    2400 to 2500 MHz
  • Power
    54.77 dBm
  • Power(W)
    300 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Gain
    17 dB
  • Class
    AB, C
  • Supply Voltage
    50 V
  • Package Type