IB1011L110

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011L110 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 50.41 to 51.93 dBm, Power(W) 155.96 W, Gain 11 dB, Power Gain (Gp) 10.9 to 12.4 dB. More details for IB1011L110 can be seen below.

Product Specifications

  • Part Number
    IB1011L110
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 11 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    50.41 to 51.93 dBm
  • Power(W)
    155.96 W
  • Peak Output Power
    110 W
  • Pulsed Width
    32 to 48 us
  • Gain
    11 dB
  • Power Gain (Gp)
    10.9 to 12.4 dB
  • Supply Voltage
    48 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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