IB1011L470

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011L470 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 56.72 to 58.22 dBm, Power(W) 663.74 W, Gain 10.2 dB, Power Gain (Gp) 9.73 to 11.23 dB. Tags: Flange. More details for IB1011L470 can be seen below.

Product Specifications

    Product Details

    • Part Number :
      IB1011L470
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      1030 MHz, 10.2 dB Bipolar Transistor

    General Parameters

    • Transistor Type :
      Bipolar
    • Technology :
      Si
    • Application Industry :
      Aerospace & Defence
    • Application :
      Avionics, L Band
    • CW/Pulse :
      Pulse
    • Frequency :
      1.03 to 1.09 GHz
    • Power :
      56.72 to 58.22 dBm
    • Power(W) :
      663.74 W
    • Peak Output Power :
      470 W
    • Pulsed Width :
      32 to 48 us
    • Gain :
      10.2 dB
    • Power Gain (Gp) :
      9.73 to 11.23 dB
    • Supply Voltage :
      48 V
    • Breakdown Voltage :
      85 V (Collector Emmiter)
    • Package Type :
      Flange
    • Package :
      Ceramic
    • Operating Temperature :
      -55 to 200 Degree C
    • Storage Temperature :
      -55 to 150 Degree C

    Technical Documents

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