IB1011M190

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011M190 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 52.79 to 54.27 dBm, Power(W) 267.3 W, Gain 12.3 dB, Power Gain (Gp) 11 to 12.5 dB. More details for IB1011M190 can be seen below.

Product Specifications

  • Part Number
    IB1011M190
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 12.3 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    52.79 to 54.27 dBm
  • Power(W)
    267.3 W
  • Peak Output Power
    190 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    12.3 dB
  • Power Gain (Gp)
    11 to 12.5 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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