IB1011M190 Image

IB1011M190

Note : Your request will be directed to Integra Technologies, Inc..

The IB1011M190 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 52.79 to 54.27 dBm, Power(W) 267.3 W, Gain 12.3 dB, Power Gain (Gp) 11 to 12.5 dB. Tags: Flange. More details for IB1011M190 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011M190
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 12.3 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    52.79 to 54.27 dBm
  • Power(W)
    267.3 W
  • Peak Output Power
    190 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    12.3 dB
  • Power Gain (Gp)
    11 to 12.5 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    65 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

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