IB1011M660

RF Transistor by Integra Technologies, Inc. (161 more products)

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The IB1011M660 from Integra Technologies, Inc. is a RF Transistor with Frequency 1030 MHz, Gain 11.1 dB, Power 58.48 dBm, Input Power 705 W, Supply Voltage 50 V. More details for IB1011M660 can be seen below.

Product Specifications

  • Part Number
    IB1011M660
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 11.1 dB Bipolar Transistor
  • Transistor Type
  • Application Type
    Avionics
  • Grade
    Military, Commercial, Space, Aerospace, SATCOM
  • Frequency
    1030 MHz
  • Gain
    11.1 dB
  • Power
    58.48 dBm
  • Input Power
    705 W
  • Supply Voltage
    50 V
  • Drain Efficiency
    0.57
  • Input Return Loss
    10 dB
  • Power Dissipation (Pdiss)
    55 W
  • Package Type
    Flanged
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