IB1011M660

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011M660 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 58.2 to 59.7 dBm, Power(W) 933.25 W, Gain 11.1 dB, Power Gain (Gp) 10.8 to 12.3 dB. More details for IB1011M660 can be seen below.

Product Specifications

  • Part Number
    IB1011M660
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 11.1 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    58.2 to 59.7 dBm
  • Power(W)
    933.25 W
  • Peak Output Power
    660 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    11.1 dB
  • Power Gain (Gp)
    10.8 to 12.3 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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