IB1011M1000

RF Transistor by Integra Technologies, Inc. (199 more products)

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The IB1011M1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60 to 61.5 dBm, Power(W) 1412.54 W, Gain 9.2 dB, Power Gain (Gp) 8.86 to 10.36 dB. More details for IB1011M1000 can be seen below.

Product Specifications

  • Part Number
    IB1011M1000
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 9.2 dB Bipolar Transistor
  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    60 to 61.5 dBm
  • Power(W)
    1412.54 W
  • Peak Output Power
    1000 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    9.2 dB
  • Power Gain (Gp)
    8.86 to 10.36 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C
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