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IB1011M1000

Note : Your request will be directed to Integra Technologies, Inc..

The IB1011M1000 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60 to 61.5 dBm, Power(W) 1412.54 W, Gain 9.2 dB, Power Gain (Gp) 8.86 to 10.36 dB. Tags: Flange. More details for IB1011M1000 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011M1000
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 9.2 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence
  • Application
    Avionics, L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    60 to 61.5 dBm
  • Power(W)
    1412.54 W
  • Peak Output Power
    1000 W
  • Pulsed Width
    0.5µs on / 0.5µs off x 128
  • Gain
    9.2 dB
  • Power Gain (Gp)
    8.86 to 10.36 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flange
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents

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