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The IB2729M90 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 2.9 GHz, Power 49.54 dBm, Power(W) 89.95 W, Duty_Cycle 0.1, Gain 9.8 dB. Tags: Flange. More details for IB2729M90 can be seen below.
AlGaAs/InGaAs pHEMT Transistor Die from DC to 18 GHz
15 W GaN HEMT from DC to 6 GHz
Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
500 W GaN HEMT from 2.7 to 3.1 GHz for S-Band Radar Applications
400 W CW/Pulsed GaN Amplifier from 2.75 to 3.75 GHz
500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
6 W GaN Transistor Die from 10 MHz to 18 GHz
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