1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN0912CW10

IGN0912CW10

RF Transistor by Integra Technologies, Inc.
239 more products from this company
Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN0912CW10 Image

The IGN0912CW10 from Integra Technologies, Inc. is a RF Transistor with Frequency 0.96 to 1.240 GHz, Power 40 dBm, Power(W) 10 W, Duty_Cycle 100%, Gain 17 to 21 dB(Power gain). Tags: Flanged, Ceramic. More details for IGN0912CW10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN0912CW10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    L-Band, GaN on SiC HEMT Transistor from 0.96 to 1.240 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Avionics View all
  • Application
    L Band View all
  • CW/Pulse
    Pulse, CW
  • Frequency
    0.96 to 1.240 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Duty_Cycle
    100%
  • Gain
    17 to 21 dB(Power gain)
  • Power Gain (Gp)
    17 to 21 dB
  • Input Return Loss
    -18 to -7 dB
  • VSWR
    2.00:1
  • Class
    AB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.5V
  • Input Power
    0.15 W
  • Voltage - Drain-Source (Vdss)
    60 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Efficiency
    35 to 60 %
  • Drain Leakage Current (Id)
    1.2 mA
  • Quiescent Drain Current
    18 to 25 mA
  • Junction Temperature (Tj)
    -55 to 200 Degree C
  • Thermal Resistance
    1.8 Degree C/W
  • Package Type
    Flanged, Ceramic
  • Package
    Ceramic lid
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View details on the manufacturer's website
View similar products