IGN0912CW150

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The IGN0912CW150 from Integra Technologies is an L-band GaN Power Transistor that operates from 960 to 1215 MHz. It can be used for both CW and pulsed applications. The transistor delivers an output power of more than 150 W (CW) with a gain of over 12 dB and has an efficiency of up to 75 %. This class AB transistor is fabricated using GaN on SiC HEMT technology and can handle an input power of up to 10 W. It requires a DC supply of 28 V and consumes under 48 mA of current. This RoHS/REACH complaint transistor is available in a metal-based package with an epoxy-sealed ceramic lid and is ideal for L-band avionics IFF & SSR systems, ACAN/DME systems, uplink/downlink (Transponder), and standard mode S applications.

Product Specifications

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Product Details

  • Part Number
    IGN0912CW150
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    150 W CW/Pulsed GaN Transistor from 960 to 1215 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Avionics, Wireless Infrastructure
  • Application
    Avionics System, S-Band Base Transmitter Station Applications
  • CW/Pulse
    CW
  • Frequency
    960 to 1215 MHz
  • Power
    51.76 dBm
  • Power(W)
    150 W
  • Gain
    12 to 16 dB
  • Input Return Loss
    7 to 18 dB
  • VSWR
    2.00:1, 3.00:1
  • Supply Voltage
    28 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -8 to 1.5 V
  • Drain Efficiency
    55 to 75 %
  • Drain Current
    48 A
  • Gate Leakage Current (Ig)
    48 mA
  • Power Dissipation (Pdiss)
    81 W
  • Thermal Resistance
    1.5 Degree C/W
  • RoHS
    Yes
  • Storage Temperature
    -55 to 150 Degree C

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