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WSGPC04-V1

RF Transistor by MACOM
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The WSGPC04-V1 from MACOM is a RF Transistor with Frequency DC to 5 GHz, Power 38 dBm, Power(W) 6.3 W, Saturated Power 6.30 W, Gain 15.5 to 18.8 dB. Tags: Surface Mount. More details for WSGPC04-V1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    WSGPC04-V1
  • Manufacturer
    MACOM
  • Description
    GaN on SiC Transistor Operating from DC to 5 GHz

General Parameters

  • Transistor Type
    HEMT View all
  • Technology
    GaN on SiC View all
  • Application Industry
    Cellular, Base Station
  • CW/Pulse
    Pulse View all
  • Frequency
    DC to 5 GHz
  • Power
    38 dBm
  • Power(W)
    6.3 W
  • Peak Output Power
    9.5 W
  • Saturated Power
    6.30 W
  • Pulsed Width
    20 µs
  • Gain
    15.5 to 18.8 dB
  • Small Signal Gain
    18 dB
  • Power Gain (Gp)
    15.5 to 18.8 dB
  • Input Return Loss
    -14.9 to -6 dB
  • Class
    AB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.1 V
  • Drain Gate Voltage
    0 to 50 V
  • Voltage - Drain-Source (Vdss)
    150 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Current
    15 mA
  • Drain Efficiency
    12.1 to 14.7%
  • Drain Current
    0.41 A
  • Drain Leakage Current (Id)
    0.53 mA
  • Gate Leakage Current (Ig)
    -41 mA(Gate Current)
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Surface Mount View all
  • Package
    DFN Package
  • RoHS
    Yes
  • Operating Temperature
    -40 to 225 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Adjacent Channel Power : -43 to -34 dB, Output CCDF : 6.5 to 10.1 dB, Impedance : 50 Ohms

Technical Documents
View details on the manufacturer's website
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