A2G22S190-01S Image

A2G22S190-01S

The A2G22S190-01S from NXP Semiconductors is a Doherty RF Power GaN Transistor that operates from 1800 to 2200 MHz. This class AB transistor delivers an output power of 36 watts with a power gain of over 16.5 dB and has a drain efficiency of 36.2%. It requires a DC supply of 48 V and consumes a current of up to 200 mA.

The device features high terminal impedances for optimal broadband performance. It is RoHS-compliant and is available in a NI-400S-2S package. This transistor is ideal for use in cellular base stations and digital pre-distortion error correction systems for wireless applications.

Product Specifications

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Product Details

  • Part Number
    A2G22S190-01S
  • Manufacturer
    NXP Semiconductors
  • Description
    36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaN on SiC
  • Application Industry
    Cellular
  • Application
    Cellular base station
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 2.2 GHz
  • Power
    45.56 dBm
  • Power(W)
    36 W
  • Power Gain (Gp)
    15.7 to 18.7 dB
  • Input Return Loss
    -7 to -4 dB
  • VSWR
    10:1
  • Class
    Class 1B
  • Features
    High terminal impedances for optimal broadband performance, Designed for digital predistortion error correction systems, Optimized for Doherty applications
  • Supply Voltage
    0 to 55 Vdc
  • Breakdown Voltage - Drain-Source
    150 V
  • Voltage - Drain-Source (Vdss)
    125 V
  • Voltage - Gate-Source (Vgs)
    -8 to 0 V
  • Current
    19 mA
  • Drain Efficiency
    33.5 to 38.5 Percent
  • Lead Free
    Yes
  • Junction Temperature (Tj)
    -55 to 225 Degree C
  • Package Type
    Flange
  • Package
    NI-400S-2S
  • RoHS
    Yes
  • Grade
    Commercial
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents

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